Published June 5, 2012 | Version v1
Journal article

Optical and electronic properties of Ti1-xNbxN thin films

  • 1. Centre for Nanotechnology, School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad-500 046 (India)
  • 2. School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046 (India)
  • 3. School of Physics, University of Hyderabad, Hyderabad-500 046 (India)

Description

Ti1-xNbxN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti1-xNbxN film.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1447
Journal Issue
1
Journal Page Range
p. 699-700
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
56. DAE solid state physics symposium 2011
Dates
19-23 Dec 2011
Place
Kattankulathur, Tamilnadu (India)

Optional Information

Notes
(c) 2012 American Institute of Physics