Published January 1983 | Version v1
Journal article Metadata-only

Positron annihilation in silicon after laser irradiation

Creators

  • 1. AN Ukrainskoj SSR, Kiev. Inst. Metallofiziki

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Позитронная аннигиляция в кремнии, подвергнутом лазерному облучению

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
17
Journal Issue
1
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
157-159
ISSN
0015-3222

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
14784756
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANGULAR DISTRIBUTION; ANNIHILATION; ARSENIC ADDITIONS; CRYSTAL DEFECTS; ELECTRONS; ENERGY DEPENDENCE; LASER RADIATION; MONOCRYSTALS; N-TYPE CONDUCTORS; PHOTONS; PHYSICAL RADIATION EFFECTS; POSITRONS; SILICON
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL STRUCTURE; CRYSTALS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INTERACTIONS; LEPTONS; MASSLESS PARTICLES; MATERIALS; MATTER; PARTICLE INTERACTIONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Notes
Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).