Engineering of Ga1-xInxAsySb1-y/GaSb quantum well for III-V based devices emitting near 2.7 μm

The present investigation is focused on the electronic band parameters for Ga1-xInxAsySb1-y/GaSb quantum wells. Strain effects on heavy holes (hh), light holes (lh) and split off (so) bands are investigated as a function of indium and arsenic compositions in the hole range 0 ≤ x, y ≤ 1. The valence band offsets are calculated using the model solid theory. Taking into account these results and based on a one dimensional Schroedinger equation, we report a calculation of the quantum confinement of electron and heavy-hole levels for Ga1-xInxAsySb1-y/GaSb quantum well (QW). Our results provide useful information for the design of heterostructure emitting near 2.7 μm.