Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer
- 1. National Institute for Materials Science, Tsukuba 305-0047 (Japan)
Description
Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co2Fe(Ga0.5Ge0.5) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu52.4Zn47.6 for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ·μm2 for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hard disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co2Fe(Ga0.5Ge0.5)/CuZn interfaces
Additional details
Identifiers
- DOI
- 10.1063/1.4933397;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 16
- Journal Page Range
- p. 163901-163901.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47062981
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; BCC LATTICES; HEUSLER ALLOYS; LAYERS; MAGNETIC DISKS; MAGNETORESISTANCE; SPIN; VALVES
- Descriptors DEC
- ALLOYS; ALUMINIUM ALLOYS; ANGULAR MOMENTUM; CONTROL EQUIPMENT; COPPER ALLOYS; COPPER BASE ALLOYS; CORROSION RESISTANT ALLOYS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EQUIPMENT; FLOW REGULATORS; HEAT TREATMENTS; MAGNETIC STORAGE DEVICES; MANGANESE ALLOYS; MEMORY DEVICES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; THREE-DIMENSIONAL LATTICES; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
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