Published November 3, 2008
| Version v1
Journal article
Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment
- 1. Centre of Electronic Materials, Devices and Nanostructures, University of Manchester, Manchester M60 1QD (United Kingdom)
- 2. School of Engineering, Liverpool John Moores University, Byrom Street, Liverpool L3 3AF (United Kingdom)
- 3. CNR-INFM MDM National Laboratory, Via C. Olivetti 2, 20041, Agrate Brianza, Milan (Italy)
Description
Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.08.051Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.08.051;
- PII
- S0040-6090(08)00904-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 1
- Journal Page Range
- p. 207-208
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 5. International conference on silicon epitaxy and heterostructures
- Acronym
- ICSI-5
- Dates
- 20-24 May 2007
- Place
- Marseille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40058995
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEUTERIUM; DIELECTRIC MATERIALS; HAFNIUM OXIDES; HYDROGEN; PLASMA; SILICON; SILICON OXIDES; STACKS; STRESSES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; HAFNIUM COMPOUNDS; HYDROGEN ISOTOPES; ISOTOPES; LIGHT NUCLEI; MATERIALS; NONMETALS; NUCLEI; ODD-ODD NUCLEI; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; STABLE ISOTOPES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.