Published January 1, 2011 | Version v1
Journal article

The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study

  • 1. Department of Physics, Zhejiang University, Hangzhou, Zhejiang 310027 (China)
  • 2. NHMFL, Los Alamos National Laboratory, MS E536, Los Alamos, NM 87545 (United States)
  • 3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 10080 (China)

Description

The longitudinal electrical resistance and the transverse Hall resistance of CeFeAsO are simultaneously measured up to a magnetic field of 45T using the facilities of pulsed magnetic field at Los Alamos. Distinct behaviour is observed in both the magnetoresistance Rxx(μ0H) and the Hall resistance Rxy(μ0H) while crossing the structural phase transition at Ts∼150 K. At temperatures above Ts, little magnetoresistance is observed and the Hall resistivity follows linear field dependence. Upon cooling down the system below Ts, large magnetoresistance develops and the Hall resistivity deviates from the linear field dependence. Furthermore, we found that the transition at Ts is extremely robust against the external magnetic field. We argue that the magnetic state in CeFeAsO is unlikely a conventional type of spin-density-wave (SDW).

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/273/1/012110

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
273
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
International conference on strongly correlated electron systems
Acronym
SCES 2010
Dates
27 Jun - 2 Jul 2010
Place
Santa Fe, NM (United States)