Photovoltaic Behaviors in an Isotype n-TiO2/n-Si Heterojunction

An n-TiO2/n-Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n-Si substrates. Obvious photovoltaic behaviors are observed in this isotype heterojunction. The open circuit voltage and short circuit current of the heterojunction can reach 123 mV and 20 μA/cm2, respectively. The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction. The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)