Charge carrier migration and hole extraction from MAPbI₃

Linear as well as time resolved absorption measurements were performed on 40 nm and 170 nm thick MAPbL films with PEDOT:PSS hole extraction layer, spin-coated on quartz substrate. From linear absorption measurements exciton binding energy of 18 – 19 meV and band gap of 1.60 - 1.62 eV was deduced. Transient absorption spectra after the excitation at 1.77 eV showed a strong difference in carrier recombination dynamics for the two MAPbI₃ films of different thicknesses. From the analysis on the decay dynamics, hole population lifetime of 0.3 ns and 3.5 ns for 40 nm and 170 nm films, respectively, are determined. A numerical 1D diffusion model was used to model the carrier relaxation dynamics yielding hole diffusion constants of 0.025 - 0.030 cm²s⁻¹, which results in a hole mobility of 1 cm²(Vs)⁻¹ in these MAPbI₃ films. (paper)