Published December 1990
| Version v1
Journal article
Heavy ion total fluence effects in GaAs devices
- 1. Naval Research Lab., Washington, DC (USA)
- 2. COMSAT Labs., Clarksburg, MD (USA)
- 3. Research Center of Crete, Heraklion, Crete (Greece)
Description
Heavy ion radiation effects were studied in GaAs FETs, MMICs, and HEMTs. Significant degradation occurred at 1 x 109 cm-2 to 6 x 1011 cm-2 for GaAs MMICs depending on whether the irradiation was Si or H, respectively. HEMTs were found to withstand higher levels of irradiation than FETs or MMICs for the same degree of drain current degradation
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 37
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 2065-2070
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 27. IEEE annual conference on nuclear and space radiation effects.
- Dates
- 16-20 Jul 1990.
- Place
- Reno, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22056411
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- GALLIUM ARSENIDES; HEAVY IONS; HYDROGEN IONS; INTEGRATED CIRCUITS; PHYSICAL RADIATION EFFECTS; SILICON IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; ELECTRONIC CIRCUITS; GALLIUM COMPOUNDS; IONS; PNICTIDES; RADIATION EFFECTS
Optional Information
- Secondary number(s)
- CONF-900723--.