Published 1973
| Version v1
Book
Electrical properties of zone-purified pure silicon containing γ ray induced defects
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- London
- ISBN
- 0854981063
- Imprint Title
- Radiation damage and defects in semiconductors
- Imprint Pagination
- p. 278-283.
- Journal Issue
- no. 16
- Series
- Conference series.
Conference
- Title
- International conference on radiation damage and defects in semiconductors.
- Dates
- 19 Jul 1972.
- Place
- Reading, UK.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 4065293
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BINDING ENERGY; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; ELECTRONS; FERMI LEVEL; GAMMA RADIATION; HOLES; IMPURITIES; IRRADIATION; PHOTON BEAMS; RADIATION DOSES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; VACANCIES; VALENCE; ZONE REFINING
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; ENERGY LEVELS; FERMIONS; LEPTONS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATIONS; REFINING; SEMIMETALS; SEPARATION PROCESSES