Published May 2004
| Version v1
Journal article
Characterization of magnetic tunnel junctions (MTJ) with magnetostrictive free layer materials
Description
Magnetic tunneling junctions (MTJs) incorporating magnetostrictive free layer materials are developed and characterized for the application as highly sensitive strain sensors. Gauge factors of the order of 400-600 have already been demonstrated compared to typical values of 2-4 for metal film based strain sensors. Here, different magnetostrictive materials such as amorphous FeCoSiB alloy and polycrystalline Ni films have been investigated in order to characterize and optimize the MTJ based sensor properties
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2003.12.774;
- PII
- S0304885303017037;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 272-276
- Journal Issue
- 6
- Journal Page Range
- p. 2023-2024
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- International conference on magnetism
- Acronym
- ICM 2003
- Dates
- 27 Jul - 1 Aug 2003
- Place
- Rome (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36025324
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON ALLOYS; COBALT ALLOYS; COMPARATIVE EVALUATIONS; FILMS; IRON ALLOYS; LAYERS; MAGNETIC MATERIALS; MAGNETOSTRICTION; NICKEL; POLYCRYSTALS; SEMICONDUCTOR JUNCTIONS; SILICON ALLOYS; STRAINS; TUNNEL EFFECT
- Descriptors DEC
- ALLOYS; CRYSTALS; ELEMENTS; EVALUATION; MAGNETIC PROPERTIES; MATERIALS; METALS; PHYSICAL PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.