Published June 2006
| Version v1
Journal article
Strain-compensated nano-clusters in Al-Si-Ge alloys
- 1. National Center for Electron Microscopy, Lawrence Berkeley Laboratory, MS-72, University of California, Berkeley, 1 Cyclotron Rd., CA 94720 (United States)
- 2. Oak Ridge National Laboratory, Metals and Ceramics Division, MS-6136, Oak Ridge, TN 37831-6136 (United States)
- 3. Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta, T6G 2G6 (Canada)
Description
Atom probe tomography and high resolution transmission electron microscopy have been employed to reveal clustering of Si and Ge atoms in ternary Al-Si-Ge. No such clusters were observed in binary Al-Si. The clusters were on the order of five nanometers in diameter and contained Si, Ge and Al. This confirms a previous hypothesis that postulates the existence of such clusters due to atomic mismatch strain compensation between the Si and Ge atoms in an Al solid solution
Additional details
Identifiers
- DOI
- 10.1016/j.scriptamat.2006.01.046;
- PII
- S1359-6462(06)00099-6;
Publishing Information
- Journal Title
- Scripta Materialia
- Journal Volume
- 54
- Journal Issue
- 11
- Journal Page Range
- p. 1973-1978
- ISSN
- 1359-6462
- CODEN
- SCMAF7
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38064032
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMS; GERMANIUM ALLOYS; PRECIPITATION; PROBES; SILICON ALLOYS; SOLID SOLUTIONS; STRAINS; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALLOYS; DIAGNOSTIC TECHNIQUES; DISPERSIONS; ELECTRON MICROSCOPY; HOMOGENEOUS MIXTURES; MICROSCOPY; MIXTURES; SEPARATION PROCESSES; SOLUTIONS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.