Published September 1972
| Version v1
Journal article
Electron spin resonance of nitrogen ion implanted silicon
- 1. Tokai Univ., Tokyo (Japan). Faculty of Engineering
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Tokai Daigaku Kiyo Kogakubu
- Journal Volume
- 1972
- Journal Issue
- 1
- Series
- Tokai Daigaku Kiyo Kogakubu.
- Journal Page Range
- 1-7
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 4046786
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; HIGH TEMPERATURE; HYPERFINE STRUCTURE; ION IMPLANTATION; NITROGEN 14; RADIATION EFFECTS; SILICON; VERY HIGH TEMPERATURE
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; ISOTOPES; LIGHT NUCLEI; MAGNETIC RESONANCE; NITROGEN ISOTOPES; NUCLEI; ODD-ODD NUCLEI; RESONANCE; SEMIMETALS; STABLE ISOTOPES