Published March 30, 1980
| Version v1
Journal article
Moessbauer study of a complex Sn impurity defect in GaAs from implantations of radioactive 119In ions
- 1. Aarhus Univ. (Denmark). Inst. of Physics
- 2. European Organization for Nuclear Research, Geneva (Switzerland)
Description
A complex Sn impurity defect created by room-temperature implantation of radioactive 119In+ ions in GaAs has been studied by Mossbauer emission spectroscopy on the 24 keV γ transition of the daughter 119Sn. From the Mossbauer parameters for the Sn impurity atoms, the defect structure is proposed to consist of (nearly) substitutional Sn atoms on Ga sites associated with vacancies. (author)
Additional details
Publishing Information
- Journal Title
- J. Phys., C (London). Solid State Phys.
- Journal Volume
- 13
- Journal Issue
- 9
- Series
- J. Phys., C (London). Solid State Phys.
- Journal Page Range
- L181-L183
- ISSN
- 0022-3719
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11532913
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; GALLIUM ARSENIDES; GRAPHS; IMPURITIES; INDIUM IONS; INDIUM 119; ION IMPLANTATION; MOESSBAUER EFFECT; SPECTRA; TIN; TIN 119; VACANCIES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; DATA FORMS; DAYS LIVING RADIOISOTOPES; ELEMENTS; EVEN-ODD NUCLEI; GALLIUM COMPOUNDS; INDIUM ISOTOPES; INFORMATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; METALS; MINUTES LIVING RADIOISOTOPES; NUCLEI; NUMERICAL DATA; ODD-EVEN NUCLEI; POINT DEFECTS; RADIOISOTOPES; STABLE ISOTOPES; TIN ISOTOPES