Characterization of CuInSe2 single crystal

High quality CuInSe2 (CIS) single crystals grown by the vertical Bridgman method. The electrical conductivity, Hall coefficient and thermoelectric power were measured as a function of temperature. The energy gap was found 1.04eV. The crystals were characterized structurally by X-ray diffraction and compositionally by microprobe analyses. Throughout joining the electrical with thermoelectric power measurements many physical parameters were estimated. The effective mass of holes mp* and electrons mn* were determined at room temperature and found to be 1.66x10-30 and 8.6x10-36kg, respectively. Also, at the same temperature the mobility was found to be 956cm2/Vs. The hole and electron diffusion coefficients were found to be 23.9 and 35.85cm2/s. The relaxation times for holes and electrons were calculated and yielded the values 9.9x10-13 and 7.7x10-18s, respectively. The diffusion length for holes and electrons was obtained as Lp=4.86x10-6cm and Ln=16.61x10-9cm