Published July 30, 2008 | Version v1
Journal article Metadata-only

Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer

Creators

  • 1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261, Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)
  • 2. Department of Advanced Metallurgy and Materials Engineering, Chosun University, 357 Seosuk-dong, Dong-gu, Gwangju 501-759 (Korea, Republic of)

Description

A self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. Pt NPs with a narrow size distribution (diameter ∼4 nm) were synthesized via an alcohol reduction method. The monolayer of these Pt NPs was immobilized on a SiO2 substrate using poly(4-vinylpyridine) (P4VP) as a surface modifier. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window of 5.8 V under ± 7 V for program/erase voltage. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/19/30/305704

Additional details

Identifiers

DOI
10.1088/0957-4484/19/30/305704;
PII
S0957-4484(08)76761-8;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
30
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39111700
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
LAYERS; MEMORY DEVICES; NANOSTRUCTURES; PARTICLES; PLATINUM; SEMICONDUCTOR MATERIALS; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PLATINUM METALS; SILICON COMPOUNDS; TRANSITION ELEMENTS