Published May 2003 | Version v1
Journal article

Improved planar radio frequency inductively coupled plasma configuration in plasma immersion ion implantation

  • 1. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

Description

Plasmas with higher density and better uniformity are produced using an improved planar radio frequency (rf) inductively coupled plasma configuration in plasma immersion ion implantation (PIII). An axial magnetic field is produced by external electromagnetic coils outside the discharge chamber. The rf power can be effectively absorbed by the plasma in the vicinity of the electron gyrofrequency due to the enhanced resonant absorption of electromagnetic waves in the whistler wave range, which can propagate nearly along the magnetic field lines thus greatly increases the plasma density. The plasma is confined by a longitudinal multipolar cusp magnetic field made of permanent magnets outside the process chamber. It can improve the plasma uniformity without significantly affecting the ion density. The plasma density can be increased from 3x109 to 1x1010 cm-3 employing an axial magnetic field of several Gauss at 1000 W rf power and 5x10-4 Torr gas pressure. The nonuniformity of the plasma density is less than 10% and can be achieved in a process chamber with a diameter of 600 mm. Since the plasma generation and process chambers are separate, plasma extinction due to the plasma sheath touching the chamber wall in high-energy PIII can be avoided. Hence, low-pressure, high-energy, and high-uniformity ion implantation can be accomplished using this setup

Additional details

Identifiers

Publishing Information

Journal Title
Review of Scientific Instruments
Journal Volume
74
Journal Issue
5
Journal Page Range
p. 2704-2708
ISSN
0034-6748
CODEN
RSINAK

Optional Information

Notes
(c) 2003 American Institute of Physics.