Published February 2015 | Version v1
Journal article

Improvement of Vitamin K2 Production by Escherichia sp. with Nitrogen Ion Beam Implantation Induction

  • 1. Key Lab of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

Description

Low-energy ion implantation as a novel mutagen has been increasingly applied in the microbial mutagenesis for its higher mutation frequency and wider mutation spectra. In this work, N+ ion beam implantation was used to enhance Escherichia sp. in vitamin K2 yield. Optimization of process parameters under submerged fermentation was carried out to improve the vitamin K2 yield of mutant FM5-632. The results indicate that an excellent mutant FM5-632 with a yield of 123.2±1.6 μg/L, that is four times that of the original strain, was achieved by eight successive implantations under the conditions of 15 keV and 60×2.6×1013 ions/cm2. A further optimization increased the yield of the mutant by 39.7%, i.e. 172.1±1.2 μg/L which occurred in the mutant cultivated in the optimal fermentation culture medium composed of (per liter): 15.31 g glycerol, 10 g peptone, 2.89 g yeast extract, 5 g K2HPO4, 1 g NaCl, 0.5 g MgSO4·7H2O and 0.04 g cedar wood oil, incubated at 33 °C, pH 7.0 and 180 rpm for 120 h. (plasma technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/1009-0630/17/2/11

Additional details

Identifiers

Publishing Information

Journal Title
Plasma Science and Technology
Journal Volume
17
Journal Issue
2
Journal Page Range
p. 159-166
ISSN
1009-0630