Rate of introduction and concentration profile of A centers in n-type silicon irradiated with electrons of energy close to the defect-formation threshold

Formation of radiation defects and profiles of their concentration NRD(x) in silicon irradiated with electrons of energies close to the defect-formation threshold is discussed in a number of papers. However, a strong fall of the rate of introduction of radiation defects VRD near this threshold makes it difficult to determine their concentration by traditional methods. It is known that in n- or p-type silicon, irradiated with 60Co γ rays or with electrons, the defects are dominated by recombination centers. The authors investigated the rates of introduction VA of the A centers and the profiles of their concentration NA(x) near the defect-formation threshold