Published November 1978
| Version v1
Journal article
The diffusion of Laue spots in electron diffraction
Creators
- 1. Waseda Univ., Tokyo (Japan). School of Science and Engineering
Description
The diffusion of Laue spots in high energy electron diffraction with increasing the crystal thickness is summarized theoretically. We take into account multiple inelastic scatterings with diffraction by coupled diffusion equations with asymmetrical diffusion coefficients. Numerical calculations are performed for Si single crystal and compared with the experiments. (author)
Additional details
Publishing Information
- Journal Title
- Nippon Kessho Gakkai-Shi
- Journal Volume
- 20
- Journal Issue
- 6
- Series
- Nippon Kessho Gakkai-Shi.
- Journal Page Range
- 293-299
- ISSN
- 0369-4585
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 11500946
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- DIFFUSION; ELASTIC SCATTERING; ELECTRON DIFFRACTION; GRAPHS; INELASTIC SCATTERING; LAUE METHOD; MEAN FREE PATH; MONOCRYSTALS; MULTIPLE SCATTERING; OPTICAL DISPERSION; SILICON; STOPPING POWER; THEORETICAL DATA; THICKNESS
- Descriptors DEC
- COHERENT SCATTERING; CRYSTALS; DATA; DATA FORMS; DIFFRACTION; DIFFRACTION METHODS; DIMENSIONS; ELEMENTS; INFORMATION; NUMERICAL DATA; SCATTERING; SEMIMETALS