The influence of the heating rate on the annealing behaviour of arsenic-implanted silicon

Using channelling analysis we investigated the depth distributions of residual defects in arsenic-implanted silicon wafers (1 x 1016 cm-2, 100 keV) annealed at 8000C for 10 s, employing different heating rates of the samples (5-2800C s-1). We observed that both the density and depth distribution of residual defects located at a depth corresponding to the arsenic projected range are markedly affected by the heating rate. We interpret this result by assuming that trapping of self-interstitials occurs during regrowth of the implantation-induced amorphised layer and that its efficiency is dependent on the regrowth rate. (author)