Published March 14, 2003
| Version v1
Journal article
Low-energy electron diffraction study of the phase transition of Si(001) surface below 40 K
Creators
- 1. Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-8505 (Japan)
Description
The phase transition of Si(001) surface below 40 K was studied by low-energy electron diffraction (LEED). The temperature dependence of the intensities and widths of the quarter order diffraction spots and LEED intensity versus electron energy curves (I-V curves) were obtained in the temperature region from 20 to 300 K. While the spot intensities of the quarter order spots decrease and the widths broaden, the I-V curves do not change so much below 40 K. This clearly shows that a phase transition occurs from an ordered phase above 40 K to a disordered phase below 40 K
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 90
- Journal Issue
- 10
- Journal Page Range
- p. 106103-106103.4
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35030538
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; ORDER-DISORDER TRANSFORMATIONS; REFLECTION; SILICON; SURFACE PROPERTIES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2003 The American Physical Society