Electrical resistivity due to interstitial hydrogen and deuterium in V, Nb, Ta and Pd

The resistivity due to hydrogen and deuterium in V, Nb, Ta and Pd has been measured as a function of concentration temperature and isotopes. The measurements were performed at temperatures in the ranges 120-6700C for V, 120-7200C for Nb, and 120-7700C for Ta, and at 1700C for Pd, and in the concentration ranges of 0-0.1 atomic ratios for V, Nb and Ta and 0-0.02 atomic ratios for Pd in the α-phase. Within the ranges of concentration investigated, the resistivity due to H(D)in these metals increases linearly with H(D) concentration. The values are found to be almost independent of temperature for V, Nb and Ta. Values of the resistivity increase due to one atomic per cent of H (D) are V: 0.85 +- 0.02 (H), 0.83 +- 0.02 (D); Nb: 0.63 +- 0.01 (H), 0.62 +- 0.01 (D); Ta: 0.71 +- 0.01 (H), 0.71 +- 0.01 (D); Pd: 0.68 +- 0.05 (H), 0.62 +- 0.05 (D); all values are in μω cm. (author)