NAND gate response in a mesoscopic ring: an exact result

NAND gate response in a mesoscopic ring threaded with a magnetic flux φ is investigated by using Green's function formalism. The ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely, Va and Vb, are applied in one arm of the ring, these are treated as the two inputs of the NAND gate. We use a simple tight-binding model to describe the system and numerically compute the conductance-energy and current-voltage characteristics as functions of the gate voltages, ring-to-electrode coupling strength and magnetic flux. Our theoretical study shows that, for φ=φ0/2 (φ0=ch/e, the elementary flux quantum) a high output current (1) (in the logical sense) appears if one or both the inputs to the gate are low (0), while if both the inputs to the gate are high (1), a low output current (0) appears. It clearly exhibits the NAND gate behavior and this feature may be utilized in designing an electronic logic gate.