Published October 2019
| Version v1
Journal article
Electronic and Optical Properties of GaAlAs/GaAs Thin Films
- 1. Karimov Tashkent State Technical University (Uzbekistan)
Description
It has been shown that the formation of GaAlAs nanofilms on a GaAs surface leads to an increase in the emission coefficient of true secondary electrons and in the quantum yield of photoelectrons, which can be accounted for by the difference of the escape depth of true secondary electrons for GaAs and GaAlAs.
Additional details
Identifiers
Publishing Information
- Journal Title
- Technical Physics
- Journal Volume
- 64
- Journal Issue
- 10
- Journal Page Range
- p. 1506-1508
- ISSN
- 1063-7842
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51091505
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEPTH; ELECTRONS; EMISSION; GALLIUM ARSENIDES; NANOFILMS; OPTICAL PROPERTIES; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; ELEMENTARY PARTICLES; FERMIONS; FILMS; GALLIUM COMPOUNDS; LEPTONS; MATERIALS; NANOMATERIALS; PHYSICAL PROPERTIES; PNICTIDES; THIN FILMS
Optional Information
- Copyright
- Copyright (c) 2019 Pleiades Publishing, Ltd.