Published September 1, 1985
| Version v1
Journal article
Calculation of the Fermi level, Fermi distribution, and activity coefficient for p-SiC:Sc
Description
An investigation of thermodynamic properties of solid solutions of scandium in SiC is presented. The determination of the Fermi level and the Fermi distribution at different temperatures (1800 to 3000 K), of the concentration of impurities and the degree of compensation is one of the stages in the thermodynamic analysis of the Sc solubility process in SiC taking into account electron-hole interaction. The activity coefficient of Sc in SiC has been calculated as a function of Sc concentration
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 131
- Journal Issue
- 1
- Series
- Phys. Status Solidi B.
- Journal Page Range
- K81-K85
- ISSN
- 0370-1972
- CODEN
- PSSBB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17027211
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- BAND THEORY; DIFFUSION; ELECTRONS; FERMI LEVEL; HOLES; NUMERICAL SOLUTION; P-TYPE CONDUCTORS; QUANTITY RATIO; SCANDIUM; SILICON CARBIDES; SOLID SOLUTIONS; SOLUBILITY; THERMODYNAMIC ACTIVITY; THERMODYNAMICS; VERY HIGH TEMPERATURE
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; DISPERSIONS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; HOMOGENEOUS MIXTURES; LEPTONS; MATERIALS; METALS; MIXTURES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SOLUTIONS; TRANSITION ELEMENTS
Optional Information
- Notes
- Short note.