Ground state transition energies of electron and hole in biased InxGa1-xN/GaN quantum dots

We are interested in our study of the III-V nitrides to the InxGa1-xN/GaN quantum dots, where x=17.5% denotes the indium concentration. The adopted model to describe these III-V nitride quantum dots is that of InxGa1-xN truncated cones of radius rc lying on wetting layer, both buried into GaN matrix. This model is consistent with recent experimental works. We examine the internal electric field and radius rc of the quantum dots effects on the ground state transition energies of the electron and the hole. Our results are in sound agreement with recent experimental data. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)