Published May 2002
| Version v1
Journal article
Ion beam induced charge characterisation of a silicon microdosimeter using a heavy ion microprobe
Description
An ion beam induced charge (IBIC) facility has been added to the existing capabilities of the ANSTO heavy ion microprobe and the results of the first measurements are presented. Silicon on insulator (SOI) diode arrays with microscopic junction sizes have recently been proposed as microdosimeters for hadron therapy. A 20 MeV carbon beam was used to perform IBIC imaging of a 10 μm thick SOI device
Additional details
Identifiers
- PII
- S0168583X01013167;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 190
- Journal Issue
- 1-4
- Journal Page Range
- p. 335-338
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33062587
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARBON IONS; CHARGE COLLECTION; ION BEAMS; ION MICROPROBE ANALYSIS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CHEMICAL ANALYSIS; ELEMENTS; IONS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.