Screening test procedure for long life single mode step index separate confinement heterostructure single quantum well (SINSCH-SQW) laser diodes
Description
This paper reports on an experiment conducted to establish an effective burn-in and screening procedure for long life SINSCH-SQW laser diodes. The laser diodes were grown by MOCVD and processed with 20 μm wide defined stripes. The devices had a high reflective back facet coating with a small etalon bonded to a passivated front facet to ensure mode operation. The laser diodes were bonded p-side up to copper heat sinks using indium solder. From the test results and failure analysis, a screening strategy based on inspection and burn-in can be devised to reject devices that may fail early. Also, improvements in processing can provide potential yield improvements. After accounting for degradation relating to processing, a very long material lifetime is predicted for these SINSCH-SQW laser diodes
Additional details
Publishing Information
- Publisher
- Society of Photo-Optical Instrumentation Engineers.
- Imprint Place
- Bellingham, WA (USA)
- ISBN
- 0-8194-0078-5
- Imprint Title
- Laser diode technology and applications
- Imprint Pagination
- 392 p.
- Journal Page Range
- p. 368-375.
Conference
- Title
- SPIE conference on optics, electro-optics and laser applications in science and engineering.
- Acronym
- OE/LASE '89
- Dates
- 15-20 Jan 1989.
- Place
- Los Angeles, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22005355
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BONDING; CHEMICAL VAPOR DEPOSITION; CONTROL; COPPER; EXPERIMENTAL DATA; FAILURE MODE ANALYSIS; HEAT FLUX; HEAT SINKS; HETEROJUNCTIONS; LIFETIME; MATERIALS; OPTIMIZATION; QUANTUM EFFICIENCY; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS
- Descriptors DEC
- AMPLIFIERS; CHEMICAL COATING; DATA; DEPOSITION; EFFICIENCY; ELEMENTS; EQUIPMENT; FABRICATION; INFORMATION; JOINING; LASERS; METALS; NUMERICAL DATA; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS; SURFACE COATING; SYSTEM FAILURE ANALYSIS; SYSTEMS ANALYSIS; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-890145--.