Published May 6, 2016 | Version v1
Journal article

Exploring the electronic and optical properties of AgInO2

  • 1. Department of Physics, Goa University, Taleigao Plateau-403260, Goa (India)

Description

We computed the energy band and density of states for electronic properties while for optical properties we computed dielectric function, absorption coefficient, optical conductivity and refractive index. The origin of energy bands is interpreted in terms of density of states. The electronic transitions in energy bands are explained from frequency dependent dielectric constant. Our computed band structure predicts AgInO2 as indirect band gap semiconductor while from optical properties we have predicted importance of AgInO2 in photovoltaic applications. We also reported valence charge density for this compound. Our computed results are in better agreement with available experimental data than those of earlier theoretically reported.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1728
Journal Issue
1
Journal Page Range
vp.
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International conference on condensed matter and applied physics
Acronym
ICC 2015
Dates
30-31 Oct 2015
Place
Bikaner (India)

Optional Information

Notes
(c) 2016 Author(s)