Cathodoluminescence investigation of stacking faults and dislocations in the edge part of seed-grown m-plane GaN substrate

The extended defects in m-plane seed-grown GaN substrate have been investigated by cathodoluminescence (CL) and transmission electron microscopy (TEM). The presence of basal-plane stacking faults (BSFs) has been confirmed in the edge part of seed growth. The luminescence features of BSFs are characterized by high-resolution CL with monochromatic image and spatially resolved spectral analysis. Most stacking faults are intrinsic I${}_1$ BSFs with characteristic emission peak centered at 3.42 eV. There are a few intrinsic I${}_2$ BSFs which show varied emission energies of 3.33-3.38 eV. The motion of dislocations under electron beam irradiation has also been monitored and the correlation with stacking faults is discussed. (© 2021 Wiley‐VCH GmbH)