Theoretical polarization of zero phonon lines in point defects

In quantum technologies, point defects in semiconductors are becoming more significant. Understanding the frequency, intensity, and polarization of the zero phonon line is important. The last two properties are the subject of this paper. I present a method for calculating these properties and show the importance of using wave functions from both the ground and excited state. The validity of this method is demonstrated on the divacancy in 4H-SiC. Here, the calculated polarization and radiative lifetimes are in excellent agreement with experimental measurements. In general, this method can help to identify point defects and estimate suitable applications. (paper)