Published February 1998
| Version v1
Journal article
Positron annihilation study of defects in fission neutron irradiated GaAs
Description
Defects in the Si-doped, N-type HB GaAs single crystal irradiated by En≥1 MeV fission neutrons with a fluence of 6.5 x 1015/cm2 and 1.4 x 1014/cm2 respectively have been investigated using the positron annihilation lifetime technique. The mono- and di-vacancies were created by the irradiation and the tri-vacancies were formed during annealing. The concentration of defects was proportional to the irradiating neutron fluence. Three annealing stages were observed at 250, 450 and 650 degree C corresponding to the mono-, di- and tri-vacancies, respectively
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 21
- Journal Issue
- 2
- Journal Page Range
- p. 102-104.
- ISSN
- 0253-3219
- CODEN
- NUTEDL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 29023835
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANNIHILATION; CRYSTAL DOPING; FAST NEUTRONS; FISSION NEUTRONS; GALLIUM ARSENIDES; LIFETIME; MONOCRYSTALS; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; POSITRONS; SILICON; VACANCIES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; MATTER; NEUTRONS; NUCLEONS; PARTICLE INTERACTIONS; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS