Published April 15, 2005 | Version v1
Journal article

Microwave dielectric properties and microstructures of MgTa2O6 ceramics with CuO addition

  • 1. Department of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 70101, Taiwan (China)
  • 2. Department of Resources Engineering, National Cheng Kung University, No. 1 University Road, Tainan 70101, Taiwan (China)

Description

The effect of CuO addition on the microstructures and the microwave dielectric properties of MgTa2O6 ceramics has been investigated. It is found that low level-doping of CuO (up to 1 wt.%) can significantly improve the density of the specimens and their microwave dielectric properties. Tremendous sintering temperature reduction can be achieved due to the liquid phase effect of CuO addition observed by scanning electronic microscopy (SEM). The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. With 0.5 wt.% CuO addition, MgTa2O6 ceramic can be sintered at 1400 deg. C and possesses a dielectric constant (εr) of 28, a Q x f value of 58000 GHz and a temperature coefficient of resonant frequency (τf) of 18 ppm/ deg. C

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2004.10.037;
PII
S0254-0584(04)00552-8;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
90
Journal Issue
2-3
Journal Page Range
p. 373-377
ISSN
0254-0584
CODEN
MCHPDR

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.