Published July 16, 1982
| Version v1
Journal article
Effect of indium on the electrical transport properties of epitaxial thin SnTe films
- 1. Delhi Univ. (India). Dept. of Physics and Astrophysics
Description
The influence of indium on the electrical transport properties of thin epitaxial films of SnTe has been studied in the temperature range 100 K to 500 K. It has been found that In up to about 4.5 at% does not change the value of the Hall coefficient and the films are always p-type. The mobility, however, keeps on decreasing with the increase of indium content
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 72
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K83-K87
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 13713670
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EPITAXY; FILMS; HALL EFFECT; HIGH TEMPERATURE; INDIUM; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; QUANTITY RATIO; TEMPERATURE DEPENDENCE; TIN TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; METALS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS
Optional Information
- Notes
- Short note.