An improved method for preparing silicon carbide

A desired shape is formed from a polysilane and the shape is heated in an inert atmosphere or under vacuum to 1150 to 16000C until the polysilane is converted to silicon carbide. The polysilane contains from 0 to 60 mole percent of (CH3)2Si units and from 40 to 100 mole percent of CH3Si units. The remaining bonds on silicon are attached to another silicon atom or to a chlorine or bromine atom, such that the polysilane contains from 10 to 43 weight percent of hydrolyzable chlorine or from 21 to 63 weight percent of hydrolyzable bromine. (author)