Effect of native oxide on the crystal orientation contrast in SEM micrographs obtained at hundreds, tens and units of eV

Highlights: • crystallographic orientation contrast in SEM micrographs at energies 0 eV – 1000 eV. • effect of a native oxide layer on the crystallographic contrast in SEM images. • penetrability of a native oxide layer for the electrons having near-zero landing energy. • landing energy dependence of the contrast between the native-oxide-covered and native-oxide-free locations on the Cu surface. This paper aims to elucidate the effect of native air-formed oxide on the crystallographic contrast between differently oriented copper grains in scanning electron microscope images obtained at energies from 0 eV up to 1 keV. The contrast between the Cu grains is strongly affected by the presence of native oxide. The crystallographic orientation contrast between the grains without covering the native oxide layer is relatively weak at hundreds of eV, negligible at tens of eV, and dramatically increases at energies below 10 eV. At extremely low landing energies, say below ~ 1 eV, the surface potential differences caused by work function variations between the differently oriented Cu grains affect the primary electrons, which enables us to obtain the micrographs with high crystallographic contrast. This contrast becomes surprisingly visible even if the grains are covered by a several nm thick native oxide layer. The presence of the native air-formed oxide layer on the Cu surface is inconsiderable for the contrast formation at energies close to the mirror conditions (< 1 eV). The surface potential differences originating in the substrate can affect the incident electrons through the native oxide film situated on the Cu surface. Scanning low-energy electron microscopy is a powerful tool for mapping local work function differences with a spatial resolution slightly better than 30 nm due to high sensitivity to local electrical potentials.