Published November 7, 2009 | Version v1
Journal article

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

  • 1. High-Technology Components and Materials Research Center and Busan Center, Korea Basic Science Institute, Busan 618-230 (Korea, Republic of)
  • 2. Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
  • 3. Department of Physics, Konkuk University, Seoul 143-701 (Korea, Republic of)

Description

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/42/21/215304

Additional details

Identifiers

DOI
10.1088/0022-3727/42/21/215304;
PII
S0022-3727(09)20074-X;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
42
Journal Issue
21
Journal Page Range
[5 p.]
ISSN
0022-3727
CODEN
JPAPBE