Published November 1, 2019 | Version v1
Journal article Metadata-only

Influence of gas discharge plasma on forming process and properties of complex films

Creators

  • 1. Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk, 634050 (Russian Federation)

Description

In this paper, we present the research results on the formation mechanism of stoichiometric compounds of complex thin films formed by ion-plasma sputtering in reactive gases environment. The kinetics of complex films' formation and growth is studied as well as the change in characteristics of microelectronics elements formed on the basis of thin films during their electron-ion bombardment. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1393/1/012154

Additional details

Identifiers

DOI
10.1088/1742-6596/1393/1/012154;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1393
Journal Issue
1
Journal Page Range
[7 p.]
ISSN
1742-6596

Conference

Title
14. International Conference on Gas Discharge Plasmas and Their Applications
Dates
15-21 Sep 2019
Place
Tomsk (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53062678
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRONS; GASES; ION BEAMS; IONS; KINETICS; MICROELECTRONICS; PLASMA; STOICHIOMETRY; THIN FILMS
Descriptors DEC
BEAMS; CHARGED PARTICLES; ELEMENTARY PARTICLES; FERMIONS; FILMS; FLUIDS; LEPTONS