A DLTS analysis of electron and hole traps in proton implanted VPE grown n-GaAs using Schottky barrier diodes

Schottky barrier diodes (SBDs) were used for Deep Level Transient Spectroscopy (DLTS) characterization of electrically active defects in proton implanted n-GaAs. Although SBDs are usually only used for the detection of majority carrier defects (electron traps in n-GaAs), the fabrication of high barrier height SBDs on lowly doped ( ≤ 1 x 1015/cm3) n-GaAs in conjunction with a forward bias DLTS filling pulse enabled the detection of minority carrier defects (hole traps in n-GaAs) as well, without using optical excitation. The most prominent electron and hole traps detected had properties that corresponded with those of the well known irradiation-induced electron traps E1-E4 and hole traps H0-H4, associated with the damage produced during high energy particle irradiation. (author)