Published May 2009 | Version v1
Journal article Metadata-only

Epitaxial growth of chalcopyrite CuInS2 films on GaP(001) by controlling[Cu]/[In] ratio

Creators

  • 1. Department of Physics, MSU-Iligan Institute of Technology, Iligan City (Philippines)
  • 2. Graduate School of Science and Technology, Niigata University, Ikarashi, Niigata 950-2181 Japan (Japan)
  • 3. Center for Transdisciplinary Research, Niigata University, Ikarashi, Niigata (Japan)
  • 4. Faculty of Engineering, Niigata University, Ikarashi, Niigata (Japan)
  • 5. Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata (Japan)

Description

Epitaxial growth of CuInS2 films with various[Cu]/[In] ratios at 570 C on GaP (001) substrates is presented with structural and luminescent investigations. CuIn5S8 phase with Cu-Au ordered CuInS2 dominate in almost stoichiometric films while Cu-Au ordering of CuInS2 was observed in Cu-rich films. Chalcopyrite ordering of CuInS2 was highly evident in the slightly Cu-rich films at a narrow range of 1.28≤[Cu]/[In]≤1.41. These slightly Cu-rich films exhibited streaky reflection high energy electron diffraction patterns corresponding to the c-axis oriented chalcopyrite structure without the other oriented structures were observed, indicating highly structural quality of CuInS2 epitaxial films. Broad emission bands in the band-edge region were observed in the films. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200881163

Additional details

Identifiers

DOI
10.1002/pssc.200881163;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
Journal Volume
6
Journal Issue
5
Journal Page Range
p. 1019-1022
ISSN
1862-6351

Conference

Title
16. International conference on ternary multinary compounds
Acronym
ICTMC16
Dates
15-19 Sep 2008
Place
Berlin (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40055101
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BRAGG REFLECTION; COPPER SULFIDES; ELECTRON DIFFRACTION; EMISSION SPECTRA; ENERGY SPECTRA; EPITAXY; FILMS; GALLIUM PHOSPHIDES; INDIUM SULFIDES; INFRARED SPECTRA; ORIENTATION; PHOTOLUMINESCENCE; STOICHIOMETRY; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0400-1000 K; TETRAGONAL LATTICES; X-RAY DIFFRACTION
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; REFLECTION; SCATTERING; SPECTRA; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
With 4 figs., 0 tabs., 14 refs.; SICI: 1862-6351(200905)6:5<1019::AID-PSSC200881163>3.0.TX;2-X