Published September 19, 2011
| Version v1
Journal article
Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc
Creators
- 1. Departmant of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
- 2. Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan (China)
- 3. CMC Magnetics Corporation, Taoyuan 333, Taiwan (China)
- 4. Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan (China)
Description
The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu3Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu3Si nucleation sites as the film was annealed at 270 deg. C. After heating to 500 deg. C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4x BD-R with the bottom jitter values below 6.5%.
Additional details
Identifiers
- DOI
- 10.1063/1.3641417;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 99
- Journal Issue
- 12
- Journal Page Range
- p. 121908-121908.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43116012
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; COPPER SILICIDES; CRYSTALLIZATION; CUBIC LATTICES; DEPOSITION; GRAIN SIZE; HEATING; INTERFACES; LAYERS; NUCLEATION; SILICON; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- COPPER COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; FILMS; HEAT TREATMENTS; MICROSTRUCTURE; PHASE TRANSFORMATIONS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SIZE; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics