Published 1988 | Version v1
Book

High energy ion beam annealing in implanted CdTe

  • 1. Oak Ridge National Lab., Oak Ridge, TN (USA)
  • 2. Massachusetts Institute of Technolgy, Cambridge, MA (USA)

Description

In this paper the annealing effects of a high energy beam of Cu ions on implanted CdTe crystals are studied. Single crystals of CdTe have been implanted with Eu (energy 60 keV, fluence 1 x 1016 cm-2) at substrate temperatures of 250C, and 4000C. Lattice damage introduced by the implantation process was measured by Rutherford backscattering. The samples were then implanted with high energy Cu ions (energy 3.5 MeV, fluence 0.5 x 1016 cm-2) at substrate temperatures of 250C and 2000C. Channeling spectra from these samples indicate a reduction in the near-surface lattice damage as a result of the Cu implantation that can be unambiguously separated from the external heating of the substrate

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
0-931837-68-5
Imprint Title
Fundamentals of beam-solid interactions and transient thermal processing
Imprint Pagination
763 p.
Series
Materials Research Society symposium proceedings. Volume 100.
Journal Page Range
p. 305-310.

Conference

Title
Symposium on fundamentals of beam-solid interactions and transient thermal processing.
Dates
30 Nov - 3 Dec 1987.
Place
Boston, MA (USA).

Optional Information

Secondary number(s)
CONF-8711126--.