Published May 15, 2014 | Version v1
Journal article

Towards from indirect to direct band gap and optical properties of XYP2 (X=Zn, Cd; Y=Si, Ge, Sn)

  • 1. Department of Physics, Hazara University Mansehra, KPK (Pakistan)
  • 2. Materials Modeling Lab, Department of Physics, Islamia College, Peshawar (Pakistan)
  • 3. Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria)
  • 4. Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia)
  • 5. New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic)
  • 6. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

Description

First principle calculations are performed to predict the electronic and optical properties of XYP2 (X=Zn, Cd; Y=Si, Ge, Sn) compounds. The calculations show an excellent agreement with the available experimental results as compared to previous calculations. The band gap value decreases by changing the cations X from Zn to Cd as well as Y from Si to Ge to Sn in XYP2. The d-states of the Zn and Cd contribute majorly in the density of states. Bonding nature in these compounds is analyzed from the electron density plots. Optical response of these compounds is noted from the complex refractive index and reflectivity spectra. The wide direct band gap and the high reflectivity in the visible and ultraviolet regions for these compounds make them potential candidates for optoelectronic and photonic applications.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2014.02.021

Additional details

Identifiers

DOI
10.1016/j.physb.2014.02.021;
PII
S0921-4526(14)00108-2;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
441
Journal Page Range
p. 94-99
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.