Published 2019 | Version v1
Book

Topology and parameters of test crystal for studying complementary field transistors with regulating p-n-transition at cryogenic temperatures and radiation conditions

  • 1. Donskoj Gosudarstvennyj Tekhnicheskij Univ., Rostov-na-Donu (Russian Federation)

Description

no abstract available

Part of:
International scientific and practical conference of students, postgraduates and young scientists «Physical and technical problems in science, industry and medicine (FTPNPM-2019)». Collection of scientific papers

Additional details

Additional titles

Original title (Russian)
Topologiya i parametry testovogo kristalla dlya issledovaniya komplementarnykh polevykh tranzistorov s upravlyayushchim p-n perekhodom pri kriogennykh temperaturakh i v usloviyakh radiatsii

Publishing Information

Publisher
Izd-vo TPU
Imprint Place
Tomsk (Russian Federation)
ISBN
978-5-4387-0900-8
Imprint Title
International scientific and practical conference of students, postgraduates and young scientists #Left-Pointing Double Angle Quotation Mark#Physical and technical problems in science, industry and medicine (FTPNPM-2019)#Right-Pointing Double Angle Quotation Mark#. Collection of scientific papers
Imprint Pagination
250 p.
Journal Page Range
p. 176

Conference

Title
International scientific and practical conference of students, postgraduates and young scientists on physical and technical problems in science, industry and medicine
Original Conference Title
Mezhdunarodnaya nauchno-prakticheskaya konferentsiya studentov, aspirantov i molodykh uchenykh «Fiziko-tekhnicheskie problemy v nauke, promyshlennosti i meditsine (FTPNPM-2019)»
Acronym
FTPNPM-2019
Dates
30 Sep - 4 Oct 2019
Place
Tomsk (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
52087523
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
CRYSTAL STRUCTURE; CRYSTALS; FIELD EFFECT TRANSISTORS; PHYSICAL RADIATION EFFECTS; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TOPOLOGY
Descriptors DEC
MATHEMATICS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS

Optional Information

Notes
1 ref., 1 fig., 1 tab. Imprint:Mezhdunarodnaya nauchno-prakticheskaya konferentsiya studentov, aspirantov i molodykh uchenykh #Left-Pointing Double Angle Quotation Mark#Fiziko-tekhnicheskie problemy v nauke, promyshlennosti i meditsine (FTPNPM-2019)#Right-Pointing Double Angle Quotation Mark#. Sbornik nauchnykh trudov