Published September 2, 2009 | Version v1
Journal article

99% random telegraph signal-like noise in gold nanoparticle μ-stripes

  • 1. LPCNO INSA-UPS-CNRS, Universite de Toulouse, 135 avenue de Rangueil, F-31077 Toulouse (France)
  • 2. Laboratoire de Chimie de Coordination (CNRS), 205 route de Narbonne, 31077 Toulouse (France)
  • 3. Institut d'Electronique du Solide et des Systemes (InESS), CNRS: UMR7163-23, rue du Loess-BP 20 CR-F-67037 STRASBOURG Cedex 2 (France)
  • 4. CEMES-CNRS and Universite de Toulouse, groupe GNS, 29 rue Jeanne Marvig 31055 Toulouse (France)
  • 5. Ecole Polytechnique Federale Lausanne (EPFL), Lab. de Microsystemes, CH-1015 Lausanne (Switzerland)

Description

In this paper, we report on a process to prepare gold nanoparticle stripes on SiO2 by convective/capillary assembly without any patterning of the substrate. Electrical devices were then fabricated using stencil lithography in order to avoid any contamination. I(V) measurements at room temperature show that these stripes have an ohmic behavior between ± 0.5 V with a resistivity ranging from one to two orders higher than the gold bulk value. Furthermore, I(V) and I(t) measurements reveal current fluctuations that were interpreted in terms of charging and discharging of nanoparticle islands leading to a very large electrostatic perturbation of current conduction paths. Unconventional relative amplitudes of up to 99% RTS fluctuations were observed.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/20/35/355303

Additional details

Identifiers

DOI
10.1088/0957-4484/20/35/355303;
PII
S0957-4484(09)18725-1;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
20
Journal Issue
35
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42071503
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
DISTURBANCES; FLUCTUATIONS; GOLD; NANOSTRUCTURES; PERTURBATION THEORY; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
CHALCOGENIDES; ELEMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS; VARIATIONS