99% random telegraph signal-like noise in gold nanoparticle μ-stripes
Creators
- 1. LPCNO INSA-UPS-CNRS, Universite de Toulouse, 135 avenue de Rangueil, F-31077 Toulouse (France)
- 2. Laboratoire de Chimie de Coordination (CNRS), 205 route de Narbonne, 31077 Toulouse (France)
- 3. Institut d'Electronique du Solide et des Systemes (InESS), CNRS: UMR7163-23, rue du Loess-BP 20 CR-F-67037 STRASBOURG Cedex 2 (France)
- 4. CEMES-CNRS and Universite de Toulouse, groupe GNS, 29 rue Jeanne Marvig 31055 Toulouse (France)
- 5. Ecole Polytechnique Federale Lausanne (EPFL), Lab. de Microsystemes, CH-1015 Lausanne (Switzerland)
Description
In this paper, we report on a process to prepare gold nanoparticle stripes on SiO2 by convective/capillary assembly without any patterning of the substrate. Electrical devices were then fabricated using stencil lithography in order to avoid any contamination. I(V) measurements at room temperature show that these stripes have an ohmic behavior between ± 0.5 V with a resistivity ranging from one to two orders higher than the gold bulk value. Furthermore, I(V) and I(t) measurements reveal current fluctuations that were interpreted in terms of charging and discharging of nanoparticle islands leading to a very large electrostatic perturbation of current conduction paths. Unconventional relative amplitudes of up to 99% RTS fluctuations were observed.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/20/35/355303Additional details
Identifiers
- DOI
- 10.1088/0957-4484/20/35/355303;
- PII
- S0957-4484(09)18725-1;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 20
- Journal Issue
- 35
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42071503
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- DISTURBANCES; FLUCTUATIONS; GOLD; NANOSTRUCTURES; PERTURBATION THEORY; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS; VARIATIONS