Electrical evaluation of cadmium telluride growth from tellurium melt

Drift mobilities, trapping levels and trap concentration were measured using the time-of-flight technique for both holes and electrons in Cl-doped cadmium telluride grown from tellurium melt. The self-compensation technique was used to prepare semi-insulating cadmium telluride in which electron traps were found 25 and 50 meV below the conduction band and hole traps 150 meV above the valence band. The same levels were observed in cadmium telluride crystals grown by the travelling heater method. (author)