Formation of p-n junctions by the recoil atom method for semiconductor detectors

For fabricating nuclear radiation detectors the possibility of p-n junction formation by the recoil atom method has been investigated. The detectors have been made of oxygen-free silicon alloyed with antimony, bismuth, gallium, boron. The silicon samples after grinding, polishing and pickling have been placed close to doping material plate in a vacuum chamber at the outlet of the Van-de-Graaf electrostatic accelerator. The plates have been positioned at an accelerator beam 'n'. g e. A 0.5-1 MeV argon atom beam with 0.1-3 μA beam current has been directed onto the doping material plate. The particles knocked out of the plate have been implanted into the sample situated at a 3 to 10 cm distance from the plate. Models of detectors with a working window of 5 to 10 mm diameter have been manufactured from the doped material. The workability and energy resolution of the detectors have been checked by recording spectra from an α-source. The energy resolution of detectors strongly depends on irradiation dose