Published September 1991
| Version v1
Journal article
Effect of low energy ions on Al/GaAs interface
- 1. Moskovskij Inst. Ehlektronnoj Tekhniki, Moscow (Russian Federation)
Description
The effect of ion-beam treatment in 50-200 eV ion energy range on the characteristics of the contact with the Schottky barrier Al/GaAs is investigated. It is shown that the utilization of optimal energy range of 50-95 eV allows to improve the characteristics of the contact through reduction of radiation disturbances resulting in the formation of n+-contact disturbed layer. The application of efficient pulse photon annealing and combined process of contact establishment enhance this effect
Additional details
Additional titles
- Subtitle (English)
- 1. Electric performances of contacts with Schottky barrier
- Original title (Russian)
- Влияние воздействия ионов пониженных энергий на границу раздела Ал/GaAs
- Original subtitle (Russian)
- 1. Ehlektricheskie kharakteristiki kontakta s bar'erom Shottki.
Publishing Information
- Journal Title
- Mikroehlektronika
- Journal Volume
- 20
- Journal Issue
- 5
- Journal Page Range
- p. 475-480.
- ISSN
- 0544-1269
- CODEN
- MKETA9
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24060571
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ANNEALING; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ENERGY DEPENDENCE; EPITAXY; EV RANGE 10-100; EV RANGE 100-1000; GALLIUM ARSENIDES; INTERFACES; ION IMPLANTATION; LAYERS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; XENON IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; METALS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES