Published April 1, 1980
| Version v1
Journal article
Moessbauer study of a complex 119Sn impurity-defect in gallium phosphide
- 1. Aarhus Univ. (Denmark). Inst. of Physics
- 2. European Organization for Nuclear Research, Geneva (Switzerland)
Description
Moessbauer spectra of radioactive sup(119m)Sn implanted in GaP have been measured within 4 min after the implantation and after an annealing of the sample at 255 0C for 1 min subsequent to the implantation. The spectra have been analyzed in a least-squares fit procedure assuming two Lorentzian emission lines. One of them is assigned to Sn atoms on substitutional Ga lattice sites from a comparison of results from 119In and 119Sb implantations. The other one is attributed to a complex defect, where vacancies are associated with Sn impurity atoms on (nearly) substitutional sites
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 98
- Journal Issue
- 2
- Series
- Phys. Status Solidi B.
- Journal Page Range
- K147-K149
- ISSN
- 0370-1972
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 11566963
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; GALLIUM PHOSPHIDES; IMPURITIES; ION IMPLANTATION; MOESSBAUER EFFECT; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TIN 119; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DAYS LIVING RADIOISOTOPES; EVEN-ODD NUCLEI; GALLIUM COMPOUNDS; HEAT TREATMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; NUCLEI; PHOSPHIDES; PHOSPHORUS COMPOUNDS; POINT DEFECTS; RADIATION EFFECTS; RADIOISOTOPES; STABLE ISOTOPES; TIN ISOTOPES
Optional Information
- Notes
- Short note.